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Type :IC CHIP, Triode Transistor, IGBT Transistor, Triode Transistor
Operating Temperature :NA
Series :standard
Mounting Type :standard
Description :IRF4905PBF
Model Number :IRFB4110
Place of Origin :Guangdong, China
Brand Name :original
D/C :newest
Package Type :Throught Hole
Application :MOSFET
Supplier Type :Other
Cross Reference :NA
Media Available :datasheet
Brand :NA
Current - Collector (Ic) (Max) :NA
Voltage - Collector Emitter Breakdown (Max) :NA
Vce Saturation (Max) @ Ib, Ic :NA
Current - Collector Cutoff (Max) :NA
DC Current Gain (hFE) (Min) @ Ic, Vce :NA
Power - Max :NA
Frequency - Transition :NA
Package / Case :NA
Resistor - Base (R1) :NA
Resistor - Emitter Base (R2) :NA
FET Type :NA
FET Feature :Standard
Drain to Source Voltage (Vdss) :NA
Current - Continuous Drain (Id) @ 25°C :NA
Rds On (Max) @ Id, Vgs :NA
Vgs(th) (Max) @ Id :NA
Gate Charge (Qg) (Max) @ Vgs :NA
Input Capacitance (Ciss) (Max) @ Vds :NA
Frequency :NA
Current Rating (Amps) :NA
Noise Figure :NA
Power - Output :NA
Voltage - Rated :NA
Drive Voltage (Max Rds On, Min Rds On) :NA
Vgs (Max) :NA
IGBT Type :NA
Configuration :standard
Vce(on) (Max) @ Vge, Ic :NA
Input Capacitance (Cies) @ Vce :NA
Input :NA
NTC Thermistor :NA
Voltage - Breakdown (V(BR)GSS) :NA
Current - Drain (Idss) @ Vds (Vgs=0) :NA
Current Drain (Id) - Max :NA
Voltage - Cutoff (VGS off) @ Id :NA
Resistance - RDS(On) :NA
Voltage :NA
Voltage - Output :NA
Voltage - Offset (Vt) :NA
Current - Gate to Anode Leakage (Igao) :NA
Current - Valley (Iv) :NA
Current - Peak :NA
Applications :NA
Transistor Type :mrf150 rf power transistor
Packaging Details :Anti-static packaging
Port :SHENZHEN
Supply Ability :1000 Piece/Pieces per Week
MOQ :10 pieces
Price :$0.38/pieces 10-99 pieces
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