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Type :Other, Bipolar Junction Transistor, IGBT Transistor
Operating Temperature :-
Series :standard
Mounting Type :Surface Mount
Description :/
Model Number :MBRS540T3G
Place of Origin :Guangdong, China
Brand Name :original
D/C :22+
Package Type :Surface Mount
Application :diode schottky
Supplier Type :Other
Cross Reference :standard
Media Available :Other
Brand :Diode Schottky 40V 5A
Current - Collector (Ic) (Max) :-
Voltage - Collector Emitter Breakdown (Max) :-
Vce Saturation (Max) @ Ib, Ic :-
Current - Collector Cutoff (Max) :-
DC Current Gain (hFE) (Min) @ Ic, Vce :-
Power - Max :-
Frequency - Transition :-
Package / Case :/
Resistor - Base (R1) :/
Resistor - Emitter Base (R2) :/
FET Type :/
FET Feature :Standard
Drain to Source Voltage (Vdss) :/
Current - Continuous Drain (Id) @ 25°C :/
Rds On (Max) @ Id, Vgs :/
Vgs(th) (Max) @ Id :/
Gate Charge (Qg) (Max) @ Vgs :/
Input Capacitance (Ciss) (Max) @ Vds :/
Frequency :/
Current Rating (Amps) :/
Noise Figure :/
Power - Output :/
Voltage - Rated :/
Drive Voltage (Max Rds On, Min Rds On) :/
Vgs (Max) :/
IGBT Type :/
Configuration :standard
Vce(on) (Max) @ Vge, Ic :/
Input Capacitance (Cies) @ Vce :/
Input :/
NTC Thermistor ://
Voltage - Breakdown (V(BR)GSS) :/
Current - Drain (Idss) @ Vds (Vgs=0) :/
Current Drain (Id) - Max :/
Voltage - Cutoff (VGS off) @ Id :/
Resistance - RDS(On) :/
Voltage :/
Voltage - Output :/
Voltage - Offset (Vt) :/
Current - Gate to Anode Leakage (Igao) :/
Current - Valley (Iv) :/
Current - Peak :/
Applications :/
Transistor Type :mrf150 rf power transistor
Packaging Details :Anti-static packaging
Port :shenzhen
Supply Ability :10000 Piece/Pieces per Week
MOQ :10 pieces
Price :$1.00/pieces >=10 pieces
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