Type :Other, IGBT Transistor
Operating Temperature :-55°C ~ 175°C (TJ)
Series :standard
Mounting Type :Through Hole
Description :/
Model Number :Lm3886tf
Place of Origin :Guangdong, China
Brand Name :original
D/C :/
Package Type :/
Application :/
Supplier Type :Other
Cross Reference :standard
Media Available :Other
Brand :MOSFET N-CH 100V 33A TO-247AC
Current - Collector (Ic) (Max) :/
Voltage - Collector Emitter Breakdown (Max) :/
Vce Saturation (Max) @ Ib, Ic :/
Current - Collector Cutoff (Max) :/
DC Current Gain (hFE) (Min) @ Ic, Vce :/
Power - Max :/
Frequency - Transition :/
Package / Case :TO-247-3
Resistor - Base (R1) :/
Resistor - Emitter Base (R2) :/
FET Type :N-Channel
FET Feature :other
Drain to Source Voltage (Vdss) :100V
Current - Continuous Drain (Id) @ 25°C :33A (Tc)
Rds On (Max) @ Id, Vgs :52mOhm @ 16A, 10V
Vgs(th) (Max) @ Id :4V @ 250UA
Gate Charge (Qg) (Max) @ Vgs :94nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds :1400pF @ 25V
Frequency :/
Current Rating (Amps) :/
Noise Figure :/
Power - Output :/
Voltage - Rated :/
Drive Voltage (Max Rds On, Min Rds On) :10V
Vgs (Max) :±20V
IGBT Type :/
Configuration :other
Vce(on) (Max) @ Vge, Ic :/
Input Capacitance (Cies) @ Vce :/
Input :/
NTC Thermistor :/
Voltage - Breakdown (V(BR)GSS) :/
Current - Drain (Idss) @ Vds (Vgs=0) :/
Current Drain (Id) - Max :/
Voltage - Cutoff (VGS off) @ Id :/
Resistance - RDS(On) :/
Voltage :/
Voltage - Output :/
Voltage - Offset (Vt) :/
Current - Gate to Anode Leakage (Igao) :/
Current - Valley (Iv) :/
Current - Peak :/
Applications :/
Transistor Type :mrf150 rf power transistor
Packaging Details :Anti-static packaging
Port :SHENZHEN
Supply Ability :10000 Piece/Pieces per Day
MOQ :10 pieces
Price :$1.40/pieces >=10 pieces
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