Type :JFET, Field-Effect Transistor, IGBT Transistor
Series :standard
Mounting Type :standard
Description :/
Model Number :FR157 M1
Place of Origin :Guangdong, China
Brand Name :original
D/C :,
Package Type :Throught Hole
Application :Fast Recovery Rectifier Diodes
Supplier Type :Other
Cross Reference :standard
Media Available :Other
Brand :,
Voltage - Collector Emitter Breakdown (Max) :,
Vce Saturation (Max) @ Ib, Ic :,
DC Current Gain (hFE) (Min) @ Ic, Vce :,
Resistor - Base (R1) :,
Resistor - Emitter Base (R2) :,
FET Feature :Standard
Drain to Source Voltage (Vdss) :,
Current - Continuous Drain (Id) @ 25°C :,
Rds On (Max) @ Id, Vgs :,
Vgs(th) (Max) @ Id :,
Gate Charge (Qg) (Max) @ Vgs :,
Input Capacitance (Ciss) (Max) @ Vds :,
Frequency :,
Current Rating (Amps) :,
Noise Figure :,
Power - Output :,
Voltage - Rated :,
Drive Voltage (Max Rds On, Min Rds On) :,
Vgs (Max) :,
IGBT Type :,
Configuration :standard
Vce(on) (Max) @ Vge, Ic :,
Input Capacitance (Cies) @ Vce :,
Input :,
NTC Thermistor :,
Voltage - Breakdown (V(BR)GSS) :,
Current - Drain (Idss) @ Vds (Vgs=0) :,
Current Drain (Id) - Max :,
Voltage - Cutoff (VGS off) @ Id :,
Resistance - RDS(On) :,
Voltage :,
Voltage - Output :,
Voltage - Offset (Vt) :,
Current - Gate to Anode Leakage (Igao) :,
Current - Valley (Iv) :,
Current - Peak :,
Applications :,
Transistor Type :mrf150 rf power transistor
Packaging Details :Anti-static packaging
Port :shenzhen
Supply Ability :10000 Piece/Pieces per Week
MOQ :10 pieces
Price :$0.10/pieces >=10 pieces
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